AOB10N60 MOSFET Datasheet - Alpha & Omega Semiconductors

AOB10N60 Application

Applications By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and exis

TAGS

Alpha & Omega Semiconductors

📁 Related Datasheet

AOB10N60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOB10N60 FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

AOB10B60D - 10A Alpha IGBT (Alpha & Omega Semiconductors)
AOB10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance.

AOB10B65M1 - 10A Alpha IGBT (Alpha & Omega Semiconductors)
AOT10B65M1/AOB10B65M1 650V, 10A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description • Latest AlphaIGBT (α IGBT) technol.

AOB10T60P - N-Channel MOSFET (Alpha & Omega Semiconductors)
AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss .

AOB1100L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOB1100L FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-.

AOB1100L - 100V N-Channel Rugged Planar MOSFET (Freescale)
AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide .

AOB1100L - 100V N-Channel Rugged Planar MOSFET (Alpha & Omega Semiconductors)
AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide .

AOB11C60 - 11A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using .

AOB11N60 - 11A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOB11N60 600V,11A N-Channel MOSFET General Description The AOB11N60 has been fabricated using an advanced high voltage MOSFET process that is designe.

AOB11N60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOB11N60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R.

Stock and price