AOD422 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOD422
Manufacturer	Alpha & Omega Semiconductors
File Size	165.52 KB
Description	N-Channel MOSFET
Datasheet	AOD422_AlphaOmegaSemiconductors.pdf

The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 20 ±8 10 10 30 15 26 50 20 2.5 1.6 -55.

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Published: Dec 20, 2006 |