AOD402 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.

VDS (V) = 30V ID = 18 A (VGS = 20V) RDS(ON) < 15 mΩ (VGS = 20V) RDS(ON) < 18 mΩ (VGS = 10V) RDS(ON) < 44 mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Maximum 30 ±25 18 12 40 18 40 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH C Power Di.

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