AOD407 - P-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

es VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mW (VGS = -10V) RDS(ON) < 150mW (VGS = -4.5V) 100% UIS tested 100% RG tested TopView TO252 DPAK Bottom View DS G D DG S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C P.

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