AOD400 Datasheet, mosfet equivalent, Alpha & Omega Semiconductors

AOD400 Features

• Mosfet VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S

PDF File Details

Part number:

AOD400

Manufacturer:

Alpha & Omega Semiconductors

File Size:

156.40kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for

AOD400 Application

• Applications Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications). AOD400L is a Green Product ordering option. AOD400 and AOD4

TAGS

AOD400

Alpha & Omega Semiconductors

📁 Related Datasheet

AOD402 - N-Channel MOSFET (Alpha & Omega Semiconductors)
.. AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD402 uses advanced trench technology and desi.

AOD403 - P-Channel MOSFET (VBsemi)
AOD403 P-Channel 30 V (D-S) MOSFET .VBsemi.tw PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.009 at VGS = - 10 V 0.012 at VGS = - 4.5 V ID (A)a ±.

AOD403 - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(O.

AOD403 - P-Channel MOSFET (INCHANGE)
Isc P-Channel MOSFET Transistor INCHANGE Semiconductor AOD403 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate .

AOD404 - N-Channel MOSFET (Alpha & Omega Semiconductors)
.. AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD404 uses advanced trench technology to provi.

AOD405 - P-Channel MOSFET (Alpha & Omega Semiconductors)
Jan 2004 AOD405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD405 uses advanced trench technology to provide excellen.

AOD405 - P-Channel MOSFET (Freescale)
Freescale P-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.

AOD406 - N-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON).

AOD407 - P-Channel MOSFET (Alpha & Omega Semiconductors)
AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON).

AOD407 - N-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor AOD407 FEATURES ·Drain Current –ID=-12A@ TC=25℃ ·Drain Source Voltage- : VDSS=-60V(Min) ·Static Drain-Source On-Resi.