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AOD400 - N-Channel MOSFET

Description

The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 ±12 10 10 40 15 30 20 10 2.1 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PD.

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www.DataSheet4U.com AOD400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications). AOD400L is a Green Product ordering option. AOD400 and AOD400L are electrically identical. Features VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.
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