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AOD404 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: www.DataSheet4U.com AOD404 N-Channel Enhancement Mode Field Effect.

General Description

The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 8mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±12 85 65 200 30 120 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM T.

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