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BLF2324M8LS200P Power LDMOS transistor

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Description

BLF2324M8LS200P Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

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Datasheet Specifications

Part number
BLF2324M8LS200P
Manufacturer
Ampleon
File Size
321.68 KB
Datasheet
BLF2324M8LS200P-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 2400 MHz)

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.2 3

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