BLF2022-125 Datasheet - NXP

BLF2022-125 UHF power LDMOS transistor

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to ﬂange DESCRIPTION 3 MBL367 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a commo.

BLF2022-125 Features

* Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A

* Output power = 20 W (AV)

* Gain = 12 dB

* Efficiency = 19%

* ACPR =

* 42 dBc at 3.84 MHz

* Easy power control

* Excellent ruggedness

* High power gain

BLF2022-125_PhilipsSemiconductors.pdf