BLF2047L-90 Datasheet - Philips

BLF2047L-90 UHF power LDMOS transistor

drain gate source, connected to ﬂange 1 23 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Top view MBK394 Fig.1 Simplified outline SOT502A. .

BLF2047L-90 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on underside eliminates DC isolators, reducing common mode inductance

* Designed for broadband operation (1.8 to 2.0 GHz)

* Internal input and output matching for high gain and effi

BLF2047L-90 Datasheet (103.53 KB)