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BLF1820-40 UHF power LDMOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF1820-40 UHF power LDMOS transistor Preliminary specification 2001 Aug 10 Philips Semiconductors UHF .
drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulate.

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Datasheet Specifications

Part number
BLF1820-40
Manufacturer
Philips
File Size
155.40 KB
Datasheet
BLF1820-40-Philips.pdf
Description
UHF power LDMOS transistor

Features

* High power gain
* Easy power control
* Excellent ruggedness
* Designed for broadband operation (1.8 to 2 GHz)
* Internal input and output matching for high gain and efficiency

Applications

* Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range

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