BLF1820-90 Datasheet - Philips

BLF1820-90 UHF power LDMOS transistor

drain gate source, connected to ﬂange handbook, halfpage 1 Top view 2 3 MBK394 Fig.1 Simplified outline SOT502A. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source te.

BLF1820-90 Features

* Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:

* Output power = 90 W (PEP)

* Gain = 12 dB

* Efficiency = 32%

* dim =

* 26 dBc

* Easy power control

* Excellent ruggedness

* High power gain

* Ex

BLF1820-90 Datasheet (100.77 KB)

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Datasheet Details

Part number:

BLF1820-90

Manufacturer:

Philips

File Size:

100.77 KB

Description:

Uhf power ldmos transistor.

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BLF1820-90 UHF power LDMOS transistor Philips

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