BLF2022-120 Datasheet - NXP

BLF2022-120 UHF push-pull power LDMOS transistor

Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-to.

BLF2022-120 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on underside eliminates DC isolators, reducing common mode inductance

* Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS

* Common source class-AB operation for PCN and

BLF2022-120_PhilipsSemiconductors.pdf