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BLF2022-120

UHF push-pull power LDMOS transistor

BLF2022-120 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on underside eliminates DC isolators, reducing common mode inductance

* Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS

* Common source class-AB operation for PCN and

BLF2022-120 General Description

Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-to.

BLF2022-120 Datasheet (123.90 KB)

Preview of BLF2022-120 PDF

Datasheet Details

Part number:

BLF2022-120

Manufacturer:

NXP ↗

File Size:

123.90 KB

Description:

Uhf push-pull power ldmos transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec .

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BLF2022-120 UHF push-pull power LDMOS transistor NXP

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