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BLF2022-120 UHF push-pull power LDMOS transistor

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Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec .
Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap.

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Features

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance

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