BLF2045 Datasheet - NXP

BLF2045 UHF power LDMOS transistor

1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. 2 Top view MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in.

BLF2045 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on underside eliminates DC isolators, reducing common mode inductance

* Designed for broadband operation. APPLICATIONS

* Communication transmitter applications (PCN/PCS) in the 1.8

BLF2045 Datasheet (133.78 KB)