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BLF2047 UHF power LDMOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Product specification Supersedes data of 1999 Jul 01 199.
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap.

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Features

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (1.8 to 2.2 GHz).
* Internal input and output matching for high gain and eff

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