HMC452QS16GE Datasheet - Analog Devices

HMC452QS16GE InGaP HBT

The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utili.

HMC452QS16GE Features

* The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier:

* GSM, GPRS & EDGE

* CDMA & W-CDMA

* CATV/Cable Modem

* Fixed Wireless & WLL Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24

HMC452QS16GE Datasheet (1.07 MB)