HMC453QS16GE Datasheet, HBT, Analog Devices

HMC453QS16GE Features

• Hbt Output IP3: +51 dBm 21.5 dB Gain @ 400 MHz 8 dB Gain @ 2100 MHz 45% PAE @ +32 dBm Pout +25 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP1

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HMC453QS16GE

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📄 Datasheet

Description:

Ingap hbt. The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifie

HMC453QS16GE Application

• Applications The HMC453QS16G / HMC453QS16GE is ideal for applications requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE

TAGS

HMC453QS16GE

Analog Devices

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