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HMC815B - I/Q Upconverter

HMC815B Description

Data Sheet .
The HMC815B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MM.

HMC815B Features

* Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical OIP3: 27 dBm typical 2× LO to RF isolation: 10 dB typical 2× LO to IF isolation: 15 dB typical RF return loss: 12 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed pad, 4.

HMC815B Applications

* Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors 21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B FUNCTIONAL BLOCK DIAGRAM 32 GND 31 IF2 30 GND 29 IF1 28 NIC 27 NIC 26 NIC 25 NIC NIC 1 NIC 2 NIC

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