HMC815B Datasheet - Analog Devices

I/Q Upconverter

HMC815B Features

* Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical OIP3: 27 dBm typical 2× LO to RF isolation: 10 dB typical 2× LO to IF isolation: 15 dB typical RF return loss: 12 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed pad, 4.

HMC815B General Description

The HMC815B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 21 GHz to 27 GHz. This device provides a small signal conversion gain of 12 dB and a si.

HMC815B Datasheet (544.77 KB)