MAT01 Datasheet (Analog Devices) - Matched Monolithic Dual Transistor

MAT01, Matched Monolithic Dual Transistor

The MAT01 is a monolithic dual NPN transistor.

An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.

MAT01 Features

* Low VOS (VBE match): 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end Current mirror and cur