AM40P06-135P Datasheet (176.62 KB)
AM40P06-135P
Analog Power
176.62 KB
Mosfet.
Analog Power P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
📁 Related Datasheet
AM40P02-20D - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power .
AM40P03-20D - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM40P03-20I - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM40P03-34D - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM40P04-20D - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM40P04-20DE - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM40P20-150PCFM - MOSFET
(Analog Power)
Analog Power P-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and .
AM40-0023 - Ultra Low Noise pHEMT Dual Channel Amplifier/ 1.710-1.910 GHz
(Tyco Electronics)
Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz
V 3.00
AM40-0023
Features
n n n n n n n
CR-5
0.7 dB Typical Noise Figure 14 dB Typic.
