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ME9926 Dual N-Channel High Density Trench MOSFET

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Description

Aonetek Semiconductor Co., LTD.Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5.

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Datasheet Specifications

Part number
ME9926
Manufacturer
Aonetek Semiconductor
File Size
866.09 KB
Datasheet
ME9926-AonetekSemiconductor.pdf
Description
Dual N-Channel High Density Trench MOSFET

Features

* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.

ME9926 Distributors

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ME9926 Dual N-Channel High Density Trench MOSFET Aonetek Semiconductor
Aonetek Semiconductor ME9926-like datasheet