* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Ideal for Li ion battery pack application. SOP-8 D1 D1 D2 D2 876 5 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage D
ME9926
Aonetek Semiconductor
866.09 KB
Dual n-channel high density trench mosfet.
Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5.
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