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ME90P03-G

P-Channel MOSFET

ME90P03-G Features

* RDS(ON) 6.2mΩ@VGS=-20V RDS(ON) 7.6mΩ@VGS=-10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Portable Equipment Battery Powered System DC/DC Converter Load Switch PIN CONFIGURATION (TO-252) Top View e Ordering Info

ME90P03-G General Description

The ME90P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME90P03-G Datasheet (747.45 KB)

Preview of ME90P03-G PDF

Datasheet Details

Part number:

ME90P03-G

Manufacturer:

Matsuki

File Size:

747.45 KB

Description:

P-channel mosfet.

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ME90P03-G P-Channel MOSFET Matsuki

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