ME9926-G Datasheet - Matsuki

ME9926-G Dual N-Channel 20V (D-S) MOSFET

The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME9926-G Features

* RDS(ON)≦29mΩ@VGS=4.5V

* RDS(ON)≦42mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load S

ME9926-G Datasheet (1.24 MB)

ME9926-G Datasheet Preview — Preview of ME9926-G PDF

Datasheet Details

Part number:

ME9926-G

Manufacturer:

Matsuki

File Size:

1.24 MB

Description:

Dual n-channel 20v (d-s) mosfet.

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TAGS

ME9926-G Dual N-Channel 20V D-S MOSFET Matsuki

ME9926-G Distributor