ME9926 Datasheet - Matsuki

ME9926 Dual N-Channel 2.5-V (G-S) MOSFET

The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME9926 Features

* RDS(ON)≦29mΩ@VGS=4.5V

* RDS(ON)≦42mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load S

ME9926 Datasheet (622.19 KB)

ME9926 Datasheet Preview — Preview of ME9926 PDF

Datasheet Details

Part number:

ME9926

Manufacturer:

Matsuki

File Size:

622.19 KB

Description:

Dual n-channel 2.5-v (g-s) mosfet.

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ME9926 Dual N-Channel 2.5-V G-S MOSFET Matsuki

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