ME9926 Dual N-Channel 2.5-V (G-S) MOSFET

Matsuki

Description

Dual N-Channel 2.5-V (G-S) MOSFET GENERAL .
The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: ME9926
Manufacturer: Matsuki
File Size: 622.19 KB
Datasheet: ME9926-Matsuki.pdf
Description: Dual N-Channel 2.5-V (G-S) MOSFET

Features

* RDS(ON)≦29mΩ@VGS=4.5V
* RDS(ON)≦42mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drai

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ME9926 Dual N-Channel 2.5-V G-S MOSFET Matsuki

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