ME95N03T - N-Channel MOSFET

Matsuki

General Description

The ME95N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦6mΩ@VGS=10V.
RDS(ON)≦9mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME95N03T n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME95N03T
Manufacturer	Matsuki
File Size	833.76 KB
Description	N-Channel MOSFET
Datasheet	ME95N03T Datasheet

Other Datasheets by Matsuki

Part Number	Description
ME95N03T-G	N-Channel MOSFET
ME95N03	N-Channel MOSFET
ME95N03-G	N-Channel MOSFET
ME95N04	N-Channel MOSFET
ME95N04-G	N-Channel MOSFET
ME95N10F	N-Channel MOSFET
ME95N10F-G	N-Channel MOSFET
ME95N10T	N-Channel MOSFET
ME95N10T-G	N-Channel MOSFET
ME95P03	P-Channel MOSFET

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N-Channel 30V (D-S) MOSFET ME95N03T/ME95N03T-G GENERAL DESCRIPTION The ME95N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦9mΩ@VGS=4.