ME95N04-G Description
The ME95N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power...
ME95N04-G Key Features
- RDS(ON)≦4.3mΩ@VGS=10V
- RDS(ON)≦5.7mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME95N04-G Applications
- Power Management in Note book