Datasheet4U Logo Datasheet4U.com

ME95N03-G - N-Channel MOSFET

This page provides the datasheet information for the ME95N03-G, a member of the ME95N03 N-Channel MOSFET family.

Description

The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦3.2mΩ@VGS=10V.
  • RDS(ON)≦4.2mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME95N03-G

Datasheet Details

Part number ME95N03-G
Manufacturer Matsuki
File Size 1.07 MB
Description N-Channel MOSFET
Datasheet download datasheet ME95N03-G Datasheet
Additional preview pages of the ME95N03-G datasheet.

📁 Similar Datasheet

  • ME9435 - P-Channel 30-V MOSFET (VBsemi)
  • ME9926 - Dual N-Channel High Density Trench MOSFET (Aonetek Semiconductor)
  • ME9926 - Dual N-Channel MOSFET (VBsemi)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESCRIPTION The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. PIN CONFIGURATION (TO-252-3L) Top View FEATURES ● RDS(ON)≦3.2mΩ@VGS=10V ● RDS(ON)≦4.2mΩ@VGS=4.
Published: |