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ME90P03-G - P-Channel MOSFET

This page provides the datasheet information for the ME90P03-G, a member of the ME90P03 P-Channel MOSFET family.

Description

The ME90P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) 6.2mΩ@VGS=-20V RDS(ON) 7.6mΩ@VGS=-10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME90P03-G

Datasheet Details

Part number ME90P03-G
Manufacturer Matsuki
File Size 747.45 KB
Description P-Channel MOSFET
Datasheet download datasheet ME90P03-G Datasheet
Additional preview pages of the ME90P03-G datasheet.

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Full PDF Text Transcription

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ME90P03/ME90P03-G 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME90P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES RDS(ON) 6.2mΩ@VGS=-20V RDS(ON) 7.
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