AS4DDR32M16 Datasheet - Austin Semiconductor

AS4DDR32M16 8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetc.

AS4DDR32M16 Features

* VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

* Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (has two

* one per byte)

* Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle

AS4DDR32M16_AustinSemiconductor.pdf

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Datasheet Details

Part number:

AS4DDR32M16

Manufacturer:

Austin Semiconductor

File Size:

7.57 MB

Description:

8 meg x 16 x 4 banks double data rate sdram cots.

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AS4DDR32M16 AS4DDR32M16 Meg Banks Double Data Rate SDRAM COTS Austin Semiconductor

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