AS4DDR32M16 Datasheet (Austin Semiconductor) - 8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS

AS4DDR32M16, 8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

It is internally configured as a quad-bank DRAM.

The 512Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation.

The double data rate architecture is essentially a 2n-prefetc

AS4DDR32M16 Features

* VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

* Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (has two

* one per byte)

* Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle