AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor

Avago

Description

AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet .
The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics.

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Datasheet Specifications

Part number: AT-64020
Manufacturer: Avago
File Size: 105.75 KB
Datasheet: AT-64020-Avago.pdf
Description: Up to 4 GHz Linear Power Silicon Bipolar Transistor

Features

* High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz
* High Gain at 1 dB Compression: 10.0 dB Typical G1 dB at 2.0 GHz 6.5 dB Typical G1 dB at 4.0 GHz
* 35% Total Efficiency
* Emitter Ballast Resistors
* Hermetic,

Applications

* operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform cu

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AT-64020 GHz Linear Power Silicon Bipolar Transistor Avago

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