AT-64020 Datasheet (Avago) - Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64020, Up to 4 GHz Linear Power Silicon Bipolar Transistor

The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics.

This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Excellent dev

AT-64020 Features

* High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz

* High Gain at 1 dB Compression: 10.0 dB Typical G1 dB at 2.0 GHz 6.5 dB Typical G1 dB at 4.0 GHz

* 35% Total Efficiency

* Emitter Ballast Resistors

* Hermetic,