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AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor

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Description

AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet .
The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics.

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Datasheet Specifications

Part number
AT-64023
Manufacturer
Avago
File Size
71.95 KB
Datasheet
AT-64023-Avago.pdf
Description
Up to 4 GHz Linear Power Silicon Bipolar Transistor

Features

* High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz
* High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
* 35% Total Efficiency
* Emitter Ballast Resistors
* Hermetic, Metal

Applications

* operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform c

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