AT-64023 Datasheet (Avago) - Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64023, Up to 4 GHz Linear Power Silicon Bipolar Transistor

The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics.

This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

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AT-64023 Features

* High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz

* High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz

* 35% Total Efficiency

* Emitter Ballast Resistors

* Hermetic, Metal