B2D30065H1 - SiC Schottky Diode
of Changes Release of the datasheet.
BASiC Semiconductor Ltd.
Shenzhen, China © 2023 BASiC Semiconductor Ltd.
All Rights Reserved.
Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The inform
B2D30065H1 Features
* Low leakage current (IR)
* Zero reverse recovery current
* Temperature independent switching behavior
* Positive temperature coefficient on VF
* High surge current capacity
* Low capacitive charge Benefits
* System cost savings due to smaller magnetics
* System effi
