B2D30065H1

SiC Schottky Diode

B2D30065H1 Features

* Low leakage current (IR)

* Zero reverse recovery current

* Temperature independent switching behavior

* Positive temperature coefficient on VF

* High surge current capacity

* Low capacitive charge Benefits

* System cost savings due to smaller magnetics

* System effi

B2D30065H1 General Description

of Changes Release of the datasheet. BASiC Semiconductor Ltd. Shenzhen, China © 2023 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The inform.

B2D30065H1 Datasheet (654.41 KB)

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Datasheet Details

Part number:

B2D30065H1

Manufacturer:

BASiC Semiconductor

File Size:

654.41 KB

Description:

Sic schottky diode.

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B2D30065H1 SiC Schottky Diode BASiC Semiconductor

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B2D30065H1 Features

B2D30065H1 General Description

Datasheet Details

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