B2D30065H1 Datasheet, Diode, BASiC Semiconductor

B2D30065H1 Features

• Diode
• Low leakage current (IR)
• Zero reverse recovery current
• Temperature independent switching behavior
• Positive temperature coefficient on VF

PDF File Details

Part number:

B2D30065H1

Manufacturer:

BASiC Semiconductor

File Size:

654.41kb

Download:

📄 Datasheet

Description:

Sic schottky diode. of Changes Release of the datasheet. BASiC Semiconductor Ltd. Shenzhen, China © 2023 BASiC Semiconductor Ltd. All Rights Reserved. I

B2D30065H1 Application

• Applications
• Switch mode power supplies (SMPS)
• Uninterruptible power supplies
• Server/telecom power supplies

TAGS

B2D30065H1

BASiC Semiconductor

📁 Related Datasheet

B2D30120HC1 - SiC Schottky Diode (BASiC Semiconductor)
B2D30120HC1 SiC Schottky Diode Product Summary VRRM 1200
V Package: TO-247-3 IF (TC=155°C) QC 30 A** 178 nC** Features  Extremely low reverse c.

B2D06065E1 - SiC Schottky Diode (BASiC Semiconductor)
B2D06065E1 SiC Schottky Diode Product Summary VRRM 650
V Package: TO-252-3 IF (TC=160°C) QC 6A 17 nC Features  Low leakage current (IR)  Zero .

B2D06065K1 - SiC Schottky Diode (BASiC Semiconductor)
B2D06065K1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=165°C) 6A QC 18 nC Features  Low leakage current (IR)  Zero reverse recovery .

B2D08065K1 - SiC Schottky Diode (BASiC Semiconductor)
B2D08065K1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=160°C) 8A QC 24 nC Features  Low leakage current (IR)  Zero reverse recovery .

B2D08065KS - SiC Schottky Diode (BASiC Semiconductor)
.

B2D10065Q - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 650
V IF (TC=155°C) 10 A QC 29 nC Features  Extremely low reverse current  No reverse recovery current  Temperature ind.

B2D10120H1 - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 1200
V IF (TC=150°C) QC 10 A 51 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independ.

B2D10120K1 - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 1200
V IF (TC=155°C) QC 10 A 51 nC Features  Extremely low reverse current  No reverse recovery current  Temperature indep.

B2D15065K - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 650
V IF (TC=155°C) QC 15 A 46 nC Features  Extremely low reverse current  No reverse recovery current  Temperature indepe.

B2D16065HC1 - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 650
V IF (TC=160°C) 16 A** QC 46 nC** * Per Leg, ** Per Device Features  Low leakage current (IR)  Zero reverse recovery.