B2D30120HC1

SiC Schottky Diode

B2D30120HC1 Features

* Extremely low reverse current

* No reverse recovery current

* Temperature independent switching

* Positive temperature coefficient on VF

* Excellent surge current capability

* Low capacitive charge Benefits

* Essentially no switching losses

* System efficiency impro

B2D30120HC1 General Description

of Changes Release of the datasheet. BASiC Semiconductor Ltd. Shenzhen, China © 2022 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The inform.

B2D30120HC1 Datasheet (298.32 KB)

B2D30120HC1 Datasheet Preview — Preview of B2D30120HC1 PDF

Datasheet Details

Part number:

B2D30120HC1

Manufacturer:

BASiC Semiconductor

File Size:

298.32 KB

Description:

Sic schottky diode.

📁 Related Datasheet

B2D30065H1 - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 650V IF (TC=155°C) QC 30 A 83 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independe.

B2D06065E1 - SiC Schottky Diode (BASiC Semiconductor)
B2D06065E1 SiC Schottky Diode Product Summary VRRM 650V Package: TO-252-3 IF (TC=160°C) QC 6A 17 nC Features  Low leakage current (IR)  Zero .

B2D06065K1 - SiC Schottky Diode (BASiC Semiconductor)
B2D06065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=165°C) 6A QC 18 nC Features  Low leakage current (IR)  Zero reverse recovery .

B2D08065K1 - SiC Schottky Diode (BASiC Semiconductor)
B2D08065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=160°C) 8A QC 24 nC Features  Low leakage current (IR)  Zero reverse recovery .

B2D08065KS - SiC Schottky Diode (BASiC Semiconductor)
.

B2D10065Q - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 650V IF (TC=155°C) 10 A QC 29 nC Features  Extremely low reverse current  No reverse recovery current  Temperature ind.

B2D10120H1 - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 1200V IF (TC=150°C) QC 10 A 51 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independ.

B2D10120K1 - SiC Schottky Diode (BASiC Semiconductor)
Product Summary VRRM 1200V IF (TC=155°C) QC 10 A 51 nC Features  Extremely low reverse current  No reverse recovery current  Temperature indep.

TAGS

B2D30120HC1 SiC Schottky Diode BASiC Semiconductor

Image Gallery

B2D30120HC1 Features

B2D30120HC1 General Description

Datasheet Details

File Size:

Description:

B2D30120HC1 Distributor