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B2D20120H1 - SiC Schottky Diode

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Datasheet Details

Part number: B2D20120H1
Manufacturer: BASiC Semiconductor
File Size: 569.20 KB
Datasheet: B2D20120H1-BASiCSemiconductor.pdf
Description: SiC Schottky Diode

B2D20120H1 Product details

Description

of Changes Release of the datasheet.

Features

Extremely low reverse current.
No reverse recovery current.
Temperature independent switching.
Positive temperature coefficient on VF.
Excellent surge current capability.
Low capacitive charge Benefits.
Essentially no switching losses.
System efficiency improvement over Si diodes.
Increased power density.
Enabling higher switching frequency.
Reduction of heat sink requirements.
System cost savings due to smaller magnetics.
Reduce.

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