* 70 mil. surface-mountable ceramic package
* 23.0 dBm P1dB @ 12 GHz (typical)
* 11.5 dB Power Gain @12 GHz (typical)
* 0.25μm X 300μm recessed gate
* RoHS-compliant/lead-free APPLICATIONS
* Commercial
* Military / Hi-Rel.
* Test & Meas
BCP030C-70 Datasheet (542.71 KB)
BCP030C-70
BEREX
542.71 KB
High efficiency heterojunction power fet.
BCP030C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 300µm gate) The BeRex BCP030T-70 is a GaAs Power pHEMT in an industry standard, 70 mils..
📁 Related Datasheet
BCP020C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET (BEREX)
BCP1213 Epitaxial Planar Transistor (SeCoS)
BCP156 Planar High Performance Transistor (SeCoS)
BCP157 PNP Epitaxial Planar Transistor (SeCoS)
BCP1616A NPN Epitaxial Planar Transistor (SeCoS)
BCP1766 NPN Epitaxial Planar Transistor (SeCoS)
BCP1898 NPN Epitaxial Planar Transistor (SeCoS)
BCP194 Planar Medium Power Transistor (SeCoS)
BCP195 Medium Power Transistor (SeCoS)
