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BCP020C-70 - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Key Features

  • 70 mil. surface-mountable ceramic package.
  • 21.5 dBm P1dB @12 GHz (typical).
  • 12 dB Power Gain @12 GHz (typical).
  • RoHS-compliant/lead-free.

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Datasheet Details

Part number BCP020C-70
Manufacturer BeRex
File Size 608.75 KB
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET
Datasheet download datasheet BCP020C-70 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCP020C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 200µm gate) The BeRex BCP020C-70 is a GaAs Power pHEMT in an industry standard, 70 mil. ceramic, Micro-X, low parasitic, surface-mountable package. It’s 0.25µm by 200µm recessed gate architecture provides low noise, high gain and excellent PAE over a broad frequency range of 1000 MHz to 26 GHz. PRODUCT FEATURES • 70 mil. surface-mountable ceramic package • 21.5 dBm P1dB @12 GHz (typical) • 12 dB Power Gain @12 GHz (typical) • RoHS-compliant/lead-free APPLICATIONS • Commercial • Military / Hi-Rel.