Full PDF Text Transcription for BCP030C-70 (Reference)
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BCP030C-70. For precise diagrams, and layout, please refer to the original PDF.
BCP030C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 300µm gate) The BeRex BCP030T-70 is a GaAs Power pHEMT in an industry standard, 70 mils. ceramic, Micro-X, l...
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GaAs Power pHEMT in an industry standard, 70 mils. ceramic, Micro-X, low parasitic, surface-mountable package. It’s 0.25µm by 300µm recessed gate architecture provides low noise, high gain and excellent PAE over a broad frequency range of 1000 MHz to 26 GHz. PRODUCT FEATURES • 70 mil. surface-mountable ceramic package • 23.0 dBm P1dB @ 12 GHz (typical) • 11.5 dB Power Gain @12 GHz (typical) • 0.25μm X 300μm recessed gate • RoHS-compliant/lead-free APPLICATIONS • Commercial • Military / Hi-Rel.
BCP030C-70 Datasheet
