BCP030C-70 Description
BCP030C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 300µm gate) The BeRex BCP030T-70 is a GaAs Power pHEMT in an industry standard, 70 mils. ceramic, Micro-X, low parasitic, surface-mountable package. It’s 0.25µm by 300µm recessed gate architecture provides low noise, high gain and excellent PAE over a broad frequency range of 1000 MHz to 26 GHz.
BCP030C-70 Key Features
- 70 mil. surface-mountable ceramic package
- 23.0 dBm P1dB @ 12 GHz (typical)
- 11.5 dB Power Gain @12 GHz (typical)
- 0.25μm X 300μm recessed gate
- RoHS-pliant/lead-free