BEREX BCP120C
BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP120C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.| Part No. | BCP120C |
|---|---|
| Datasheet | BCP120C Download |
| Manufacturer |  BEREX |
| Description | HIGH EFFICIENCY HETEROJUNCTION POWER FET |
| Buy | Stock & Price |
FEATURES
● 30.5 dBm Typical Output Power● 11 dB Typical Gain @ 12 GHz
● 0.25 X 1200 Micron Recessed Gate
APPLICATIONS
● Commercial● Military / Hi-Rel.
● Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TEST FREQ. P1dB Output Power @ P1dB (Vds = 8V, Id = 180mA) 12 GHZ 18 GHz G1dB Gain @ P1dB (Vds = 8V, Id = 180mA) 12 GHZ 18 GHz PAE PAE @ P1dB (Vds = 8V, Id = 180mA) 12 GHZ 18 GHz Idss Saturated Drain Current (Vgs = 0V, Id = 1.0V) Gm Transconductance (Vds = 2V, Vgs = 180mA) Vp Pinch-off Voltage (Id = 1.2mA, Vds = 2V) BVgd Drain Breakdown Voltage (Igd = 1.2mA, source open) BVgs Source Breakdown Voltage (Ig = 1.2mA, drain open) Rth Thermal Resistance (Au-Sn Eutectic Attach) MIN. 29.0 28.0 9.5 6.5 260 -2.5 TYPICAL 30.5 29.5 11.0 8.0 60 45 380 470 -1.2 -15 -13 37 MAX. 500 -12 UNIT dBm dB % mA mS V V V °C/W BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2017 Rev.
