BCP120C Description
BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP120C is produced using state of...
BCP120C Key Features
- 30.5 dBm Typical Output Power
- 11 dB Typical Gain @ 12 GHz
- 0.25 X 1200 Micron Recessed Gate