BCP120C
BCP120C is HIGH EFFICIENCY HETEROJUNCTION POWER FET manufactured by BEREX.
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP120C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT Features
- 30.5 dBm Typical Output Power
- 11 dB Typical Gain @ 12 GHz
- 0.25 X 1200 Micron Recessed Gate
APPLICATIONS
- mercial
- Military / Hi-Rel.
- Test & Measurement
ELECTRICAL...
