BCP120C - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Datasheet Summary

Features

30.5 dBm Typical Output Power.
11 dB Typical Gain @ 12 GHz.
0.25 X 1200 Micron Recessed Gate.

BEREX

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Datasheet Details

Part number	BCP120C
Manufacturer	BEREX
File Size	354.60 KB
Description	HIGH EFFICIENCY HETEROJUNCTION POWER FET
Datasheet	BCP120C Datasheet
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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP120C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES • 30.5 dBm Typical Output Power • 11 dB Typical Gain @ 12 GHz • 0.25 X 1200 Micron Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TEST FREQ.

Published: Dec 23, 2020 |