* 30.5 dBm Typical Output Power
* 11 dB Typical Gain @ 12 GHz
* 0.25 X 1200 Micron Recessed Gate APPLICATIONS
* Commercial
* Military / Hi-Rel.
* Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TES
BCP120C
BEREX
354.60 KB
High efficiency heterojunction power fet.
BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr.
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