* Low RDS(on),low gate charge,low Crss,fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 60 V ID(Tc=25℃) 50 A ID(Tc=100℃) 35.4 A IDM 200 A VGS ±20 V EAS 490 mJ EAR 12 mJ PD(Tc=25℃) 120 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃)
CS50N06
BLUE ROCKET ELECTRONICS
245.93 KB
N-channel mosfet.
BR50N06(CS50N06)
N-CHANNEL MOSFET/N MOS
:：、DC/DC 、。
Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high
ef.
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