WFF1201
BOSCH
3.44 MB
(wff1xx1) gb directions for use.
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a t a
e h S
4 t e
U
m o .c
.
📁 Related Datasheet
WFF12N60 - N-Channel MOSFET
(Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET
WFF12N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Ext.
WFF12N60 - Silicon N-Channel MOSFET
(WINSEMI SEMICONDUCTOR)
.DataSheet.in
WFF12N60
Silicon N-Channel MOSFET
Features
■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 39nC) ■ Fast Switc.
WFF12N65 - Silicon N-Channel MOSFET
(WINSEMI SEMICONDUCTOR)
.DataSheet.in
F12N6 5 WF WFF N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ F.
WFF12N65L - Silicon N-Channel MOSFET
(Winsemi)
WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switc.
WFF12N65S - Power MOSFET
(Winsemi)
WFF12N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS pl iant � M.
WFF12N70S - Power MOSFET
(Winsemi)
WFF12N70S
700V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS pl iant � M.
WFF10N60 - N-Channel MOSFET
(Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET
WFF10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Ext.
WFF10N60 - Silicon N-Channel MOSFET
(WINSEMI SEMICONDUCTOR)
.DataSheet.in
WFF10N60
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast .
