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WFF12N65S

Power MOSFET

WFF12N65S Features

* Ultra low Rdson

* Ultra low gate charge (typ. Qg = 28nC)

* 100% UIS tested

* RoHS compl iant

* Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance

WFF12N65S General Description

Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol Parameter VDSS ID I DM Drain.

WFF12N65S Datasheet (384.97 KB)

Preview of WFF12N65S PDF

Datasheet Details

Part number:

WFF12N65S

Manufacturer:

Winsemi

File Size:

384.97 KB

Description:

Power mosfet.

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WFF12N65S Power MOSFET Winsemi

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