Winsemi Datasheet | Specifications & PDF Download

WS9032K Product Description  no-CAP®  VCC  500V，  ，  ，  ±5% LED  LED  ，    //  /T5/T8 WS9032K LED WS3420 LED WS9032K LED

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WS9002Product Description   ，  500V MOSFET  ，  ±3% LED  93%  LED /    OVP    T5  T8   LED WS9002 LED WS3420 LED WS9

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Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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WFF5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Swi

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WFF2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit

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WS3110 WS3110 High Performance LED Driver Features ■ Fast start-up time ■ Low operation current (0.6mA) ■ PSR control with Single stage PFC topology

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW18N50N Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ U

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WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 10

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WS9056X Product Description   no-CAP®   OVP    LED  LED    /  /T  WS9056X LED WS9056X LED ， 85V-265V LED 。 WS9056X

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WFF7N65SAH Product Description Silicon N-Channel MOSFET Features • 650V, 7A • RDS(ON) = 0.54Ω (Max.) @ VGS = 10V, ID = 4A • Very low FOM RDS(ON)XQg •

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WS7140ProductDescription high-side driver for automotive applications / Features ◆ VCC40V ◆ 4V28V ◆ ◆ ◆ <0.5μA ◆ 140mΩ ◆ ◆ ◆ VCC ◆ VCC ◆ ◆ ◆ VC

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Features � 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt

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Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junc

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WFN1N60NC Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■

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WFP13N50C Product Description Silicon N-Channel MOSFET Features � 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Sw

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Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Tempe

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Features □ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V □ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Vo

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Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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WCD8C60S Sensitive Gate Silicon Controlled Rectifiers Features � Sensitive gate trigger current:IGT=200µA maximum � Low On-State Voltage :VTM=1.2(typ.

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