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Winsemi
K2611 - Silicon N-Channel MOSFET
Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc.
Winsemi
WFF8N65B - Silicon N-Channel MOSFET
Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Vol.
Winsemi
WFF7N65S - 650V Super-Junction Power MOSFET
WFF7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant Gene.
Winsemi
WS9441P - Non-isolated Buck Offline LED Driver
WS9441P Product Description Features Critical Conduction Mode Operation Internal 500V Power MOSFET Gate Drive and No Auxiliary Winding ±3% LED.
Winsemi
WFW20N60W - Silicon N-Channel MOSFET
Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr W20N60W WF WFW Silicon N-Channel MOSFET Features � � � � � 20A,600V,RDS(on)(Max0.39Ω.
Winsemi
K2698 - Silicon N-Channel MOSFET
Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junct.
Winsemi
WFD20N06 - Silicon N-Channel MOSFET
WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.
Winsemi
WFD2N60B - Silicon N-Channel MOSFET
WFD2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit.
Winsemi
WFP13N50 - Silicon N-Channel MOSFET
Features � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junc.
Winsemi
WFU20N06 - Silicon N-Channel MOSFET
WFU20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.
Winsemi
WCD4C60S - Silicon Controlled Rectifiers
WCD4C60S Silicon Controlled Rectifiers Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Vo.
Winsemi
K2611B - Silicon N-Channel MOSFET
K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switc.
Winsemi
WFF2N60 - Power MOSFET
WFF2N60 Silicon N-Channel MOSFET Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%.
WINSEMI
WS3443 - Non-isolated Buck Offline LED Driver
WS3443 ProductDescription Features Critical Conduction Mode Operation Internal 500V Power MOSFET No Auxiliary Winding Ultra Low Operating Curr.
Winsemi
WS2596B - High Efficiency Charger Controller
WS2596B Product Description WS2596B High Efficiency Charger Control IC Features Standby power<75mw Low stat-up current,<1uA High efficiency(Me.
Winsemi
WS9441 - Non-isolated Buck Offline LED Driver
WS9441 Product Description Features Critical Conduction Mode Operation Internal 500V Power MOSFET Gate Drive and No Auxiliary Winding ±3% LED .
Winsemi
WS9224 - High Precision PSR Constant Current LED Driver
WS9224ProductDescription High Precision PSR Constant Current LED Driver Features Built-in 650V Power MOSFET Constant current control without sec.
WINSEMI SEMICONDUCTOR
WSP10D100 - Power Schottky Rectifier
WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■.
WINSEMI SEMICONDUCTOR
WSP20D65 - Power Schottky Rectifier
www.DataSheet.in WSP20D65 Power Schottky Rectifier Features ■ 20A(1×10A),65V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common ca.
WINSEMI SEMICONDUCTOR
WFP12N60 - Silicon N-Channel MOSFET
www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast .