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BM840F12B34U1 SiCPower Module

BM840F12B34U1 Description

BM840F12B34U1 SiC Power Module VDSS = 1200V ID = nom 500A  General .
BYD SiC Power Module BM840F12B34U1 provides low switching, which introduce the advanced SiC MOSFET chip, it is able to take on a perfect performance i.

BM840F12B34U1 Features

* The 3rd Generation Semiconductor Material-Silicon Carbide
* Blocking Voltage 1200V
* Low RDS（on）
* Low Switching Losses
* Low Qg and Cres
* Low Inductive Design≤15nH
* Ag Sintering
* Tvj op=175ºC
* Direct Cooled Cu PinFin Base Plate
* High Performance Si3N4

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Datasheet Details

Part number
BM840F12B34U1
Manufacturer
BYD
File Size
2.14 MB
Datasheet
BM840F12B34U1-BYD.pdf
Description
SiCPower Module

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SiCPower Module BYD
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