BM840F12B34U1 - SiCPower Module

Product Overview

BYD

BM840F12B34U1 SiCPower Module by BYD - Datasheet Preview — Datasheet preview – BM840F12B34U1

Datasheet Details

Part number	BM840F12B34U1
Manufacturer	BYD
File Size	2.14 MB
Description	SiCPower Module
Datasheet	BM840F12B34U1 Datasheet
Additional preview pages of the BM840F12B34U1 datasheet.

Product details

Description

BYD SiC Power Module BM840F12B34U1 provides low switching, which introduce the advanced SiC MOSFET chip, it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz.

Features

The 3rd Generation Semiconductor Material-Silicon Carbide.
Blocking Voltage 1200V.
Low RDS（on）.
Low Switching Losses.
Low Qg and Cres.
Low Inductive Design≤15nH.
Ag Sintering.
Tvj op=175ºC.
Direct Cooled Cu PinFin Base Plate.
High Performance Si3N4 Ceramic.
Integrated NTC Temperature Sensor .

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Published: Jun 15, 2025 |