BCG002 Datasheet - BeRex

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BCG002 2W GaN Power Transistor

BCG002 2W GaN Power Transistor 2W GaN Power Transistor (0.15µm x 480µm gate) The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate .

BCG002-BeRex.pdf

BCG002 Datasheet Preview — Preview of BCG002 PDF

Datasheet Details

Part number:

BCG002

Manufacturer:

BeRex

File Size:

521.47 KB

Description:

2W GaN Power Transistor

Features

* 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 55 % PAE Typical @ 12 GHz

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