BCG002 - 2W GaN Power Transistor
BCG002 2W GaN Power Transistor 2W GaN Power Transistor (0.15µm x 480µm gate) The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz.
The product may be used in either wideband or narrow-band applications.
The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
Product Feat
BCG002 Features
* 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 55 % PAE Typical @ 12 GHz
* 0.15 X 480 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel.
* Test & Measurement Typica
