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BCG002 Datasheet - BeRex

BCG002 - 2W GaN Power Transistor

BCG002 2W GaN Power Transistor 2W GaN Power Transistor (0.15µm x 480µm gate) The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz.

The product may be used in either wideband or narrow-band applications.

The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.

Product Feat

BCG002 Features

* 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz

* 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz

* 55 % PAE Typical @ 12 GHz

* 0.15 X 480 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel.

* Test & Measurement Typica

BCG002-BeRex.pdf

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Datasheet Details

Part number:

BCG002

Manufacturer:

BeRex

File Size:

521.47 KB

Description:

2w gan power transistor.

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