BCG002 Datasheet - BeRex

BCG002 2W GaN Power Transistor

BCG002 2W GaN Power Transistor 2W GaN Power Transistor (0.15µm x 480µm gate) The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. Product Feat.

BCG002 Features

* 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz

* 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz

* 55 % PAE Typical @ 12 GHz

* 0.15 X 480 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel.

* Test & Measurement Typica

BCG002-BeRex.pdf