* 36.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 10.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 55 % PAE Typical @ 12 GHz
* 0.15 X 960 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel.
* Test & Measurement Typica
BCG004
BeRex
531.94 KB
4w gan power transistor.
BCG004
4W GaN Power Transistor
4W GaN Power Transistor (0.15µm x 960µm gate)
The BeRex BCG004 is a GaN Power HEMT die with a nominal 0.15 micron gate .
📁 Related Datasheet
BCG002 - 2W GaN Power Transistor
(BeRex)
BCG002
2W GaN Power Transistor
2W GaN Power Transistor (0.15µm x 480µm gate)
The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate .
BCG008 - 8W GaN Power Transistor
(BeRex)
BCG008
8W GaN Power Transistor
8W GaN Power Transistor (0.15µm x 1250µm gate)
The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate.
BCG08-A1AM0318 - EcoLine
(SICK)
Online data sheet
BCG08-A1AM0318
EcoLine
WIRE DRAW ENCODERS
BCG08-A1AM0318 | EcoLine
WIRE DRAW ENCODERS
A B C D E F
H I J K L M N O P Q R S T
Orde.
BCG13D - Cascadeable InGaP HBT Gain Block
(BeRex)
BeRex
5-4000 MHz Cascadeable InGaP HBT Gain Block
Device Features
• 33 dBm Output IP3 at 5dBm/tone • 24.9 dB Gain at 900 MHz • 18 dBm P1dB • Highly Re.
BC-148 - BC148
(ETC)
a
148-Lead Chip Scale Package Ball Grid Array [CSP_BGA] (BC-148) Dimensions shown in millimeters 9.10 9.00 SQ 8.90 A1 CORNER INDEX AREA
16 14 12 10 1.
BC-1601A-SAYA-N-B-A00 - LCD MODULE
(ETC)
SPECIFICATION FOR LCD MODULE
MODULE NO.: BC-1601A-SAYA-N-B-A00
Doc.Version: 00
Filled in by customer:
Check list item:
1.Viewing area: 2.Module dimens.
BC-1602F-SAYB-N-B-A00 - LCD
(ETC)
SPECIFICATION
FOR
LCD MODULE
MODULE NO.: BC-1602F-SAYB-N-B-A00
Doc.Version: 00
Filled in by customer:
Check list item:
1.Viewing area: 2.Module dimens.
BC-2402A-SAGA-N-B-B00 - LCD
(ETC)
SPECIFICATION
FOR
LCD MODULE
MODULE NO.: BC-2402A-SAGA-N-B-B00
Doc.Version: 00
Filled in by customer:
Check list item:
1.Viewing area: 2.Module dimens.
