BCG004 Datasheet - BeRex

BCG004 4W GaN Power Transistor

BCG004 4W GaN Power Transistor 4W GaN Power Transistor (0.15µm x 960µm gate) The BeRex BCG004 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 960 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG004 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. Product Feat.

BCG004 Features

* 36.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz

* 10.5 dB Typical Saturated gain (G3dB) @ 12 GHz

* 55 % PAE Typical @ 12 GHz

* 0.15 X 960 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel.

* Test & Measurement Typica

BCG004 Datasheet (531.94 KB)