BCG008 Datasheet - BeRex

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BCG008 8W GaN Power Transistor

BCG008 8W GaN Power Transistor 8W GaN Power Transistor (0.15µm x 1250µm gate) The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate.

BCG008-BeRex.pdf

BCG008 Datasheet Preview — Preview of BCG008 PDF

Datasheet Details

Part number:

BCG008

Manufacturer:

BeRex

File Size:

543.01 KB

Description:

8W GaN Power Transistor

Features

* 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 72 % PAE Typical @ 12 GHz

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