* 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 72 % PAE Typical @ 12 GHz
* 0.15 X 1250 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel.
* Test & Measurement Typica
BCG008
BeRex
543.01 KB
8w gan power transistor.
BCG008 8W GaN Power Transistor 8W GaN Power Transistor (0.15µm x 1250µm gate) The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate.
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