BCG008 Datasheet - BeRex

BCG008 8W GaN Power Transistor

BCG008 8W GaN Power Transistor 8W GaN Power Transistor (0.15µm x 1250µm gate) The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 1250 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG008 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. Product Fe.

BCG008 Features

* 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz

* 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz

* 72 % PAE Typical @ 12 GHz

* 0.15 X 1250 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel.

* Test & Measurement Typica

BCG008-BeRex.pdf