* 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Curre
2SC2786
Bluecolour
540.55 KB
Npn transistor.
2SC2786 NPN Silicon Epitaxial Planar Transistor
for FM RF amplifier and local oscillator of FM tuner.
The transistor is subdivided into three groups M.
📁 Related Datasheet
2SC2780 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
.
2SC2780 - Transistor
(TY Semiconductor)
Product specification
2SC2780
SOT-89
4.50±0.1 1.80±0.1
Unit:mm
1.50 ±0.1
■ Features
● High Collector-emitter voltage. ● Complements to PNP type 2SA.
2SC2782 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175.
2SC2782 - NPN SILICON RF POWER TRANSISTOR
(ASI)
2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power am.
2SC2782 - Silicon NPN POWER TRANSISTOR
(HGSemi)
HG Semiconductors
2sc2782HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output P.
2SC2782A - Silicon NPN epitaxial planar type Transistor
(Toshiba Semiconductor)
2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
..
2SC2782A
Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi .
2SC2783 - TRANSISTOR
(Toshiba Semiconductor)
.
2SC2783 - Silicon NPN POWER TRANSISTOR
(HGSemi)
HG Semiconductors
2sc2783HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and conditio.
