BS616LV1010 Very Low Power/Voltage CMOS SRAM

Brilliance Semiconductor

Description

BSI Very Low Power/Voltage CMOS SRAM 64K X 16 bit BS616LV1010 * .
The BS616LV1010 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide r.

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Datasheet Specifications

Part number: BS616LV1010
Manufacturer: Brilliance Semiconductor
File Size: 210.67 KB
Datasheet: BS616LV1010_BrillianceSemiconductor.pdf
Description: Very Low Power/Voltage CMOS SRAM

Features

* Very low operation voltage : 2.4 ~ 5.5V
* Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max. ) operating current I- grade : 25mA (Max. ) operating current 0.02uA (Typ. ) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max. ) operating current I- grade : 40mA (Max. ) operating

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BS616LV1010 Very Low Power Voltage CMOS SRAM Brilliance Semiconductor

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