BS616LV1623 Very Low Power/Voltage CMOS SRAM

Brilliance Semiconductor

Description

BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 * .
The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8.

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Datasheet Specifications

Part number: BS616LV1623
Manufacturer: Brilliance Semiconductor
File Size: 251.40 KB
Datasheet: BS616LV1623-BSI.pdf
Description: Very Low Power/Voltage CMOS SRAM

Features

* Vcc operation voltage : 2.7 ~ 3.6V
* Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ. ) CMOS standby current

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BS616LV1623 Very Low Power Voltage CMOS SRAM Brilliance Semiconductor

Brilliance Semiconductor BS616LV1623-like datasheet