BS616LV2010
BS616LV2010 is Very Low Power/Voltage CMOS SRAM 128K X 16 bit manufactured by Brilliance Semiconductor.
- Features
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
- DESCRIPTION
- Very low operation voltage : 2.7 ~ 3.6V
- Very low power consumption : Vcc = 3.0V C-grade: 25m A (Max.) operating current I-grade: 30m A (Max.) operating current 0.15u A (Typ.) CMOS standby current
- High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V
- Automatic power down when chip is deselected
- Three state outputs and TTL patible
- Fully static operation
- Data retention supply voltage as low as 1.5V
- Easy expansion with CE and OE options
- I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV2010 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power Features with a typical CMOS standby current of 0.15u A and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2010 is available in DICE form , JEDEC standard 44-pin TSOP Type II package. 48-pin TSOP Type I package and 48-ball BGA package.
- PRODUCT FAMILY
PRODUCT FAMILY BS616LV2010EC BS616LV201 0EI OPERATING TEMPERATURE +0 C to +70 C -40 C to +85 C
Vcc RANGE 2.7V ~ 3.6V 2.7V ~ 3.6V
SPEED (ns)
Vcc=3.0V
POWER DISSIPATION STANDBY Operating
( ICCSB1, Max ) ( ICC, Max )
PKG TYPE
Vcc=3.0V
Vcc=3.0V
70 / 100 70 / 100
8u A 12u A
25m A 30m A
TSOP2-44 TSOP2-44
- PIN CONFIGURATIONS
- BLOCK...
