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BS616LV2010 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit

Datasheet Summary

Description

BS616LV2010 Very low operation voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 25mA (Max.) operating current I-grade: 30mA (Max.) operating current 0.15uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100n

Features

  • S Very Low Power/Voltage CMOS SRAM 128K X 16 bit.

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Datasheet Details

Part number BS616LV2010
Manufacturer Brilliance Semiconductor
File Size 195.50 KB
Description Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Datasheet download datasheet BS616LV2010 Datasheet
Additional preview pages of the BS616LV2010 datasheet.

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 25mA (Max.) operating current I-grade: 30mA (Max.) operating current 0.15uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV2010 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.
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